Semiconductor device and fabrication method for semiconductor device
US12009268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2023 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jul 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes trench portions arrayed in a first direction on an upper surface side of a semiconductor substrate, a first conductivity type lower surface region provided in a part of a lower surface of the semiconductor substrate, a second conductivity type base region provided on the upper surface side, a first conductivity type first region disposed between the base region and the lower surface region, a first conductivity type upper surface region provided on an upper surface of the semiconductor substrate, and a second conductivity type bottom region disposed continuously in the first direction to be in contact with bottom portions of the trench portions. In a cross section along the first direction and perpendicular to the upper and lower surfaces and passing through the lower surface region, one end portion of the bottom region in the first direction locates directly above the lower surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.