Semiconductor apparatus including different thermal resistance values for different heat transfer paths
US12009273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2020 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes a substrate, plural transistor groups disposed on the substrate, an insulating film, and a metal member. Each of the plural transistor groups includes plural unit transistors arranged in a first direction within a plane of a top surface of the substrate. The plural transistor groups are arranged in a second direction perpendicular to the first direction. The insulating film covers the plural unit transistors and includes at least one cavity. The metal member is disposed on the insulating film and is electrically connected to the plural unit transistors via the at least one cavity. A heat transfer path is formed by a metal in a region from each of the plural unit transistors to a top surface of the metal member. Thermal resistance values of the heat transfer paths are different from each other among the plural unit transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.