Diode-triggered bidirectional silicon controlled rectifier and circuit

US12009357B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Pan Mao · Hefei, CN
• Yingtao Zhang · Hefei, CN
• Junjie Liu · Shandong, CN
• Lingxin Zhu · Hefei, CN
• Bin Song · Lanzhou, CN
• Qian Xu · Beijing, CN
• Tieh-Chiang Wu · Daxi District, TW

Key dates

• Filing date: Oct 18, 2021
• Grant date: Jun 11, 2024
• Expiry date: Feb 18, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611

Abstract

The present disclosure provides a diode-triggered bidirectional silicon controlled rectifier and circuit. The silicon controlled rectifier includes: a P-type substrate; a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well; a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well. The second N-type doped region is electrically connected with a positive electrode of a diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.