Pixel of a semiconductor image sensor and method of manufacturing a pixel

US12009380B2 · kind B2 · utility

Assignee

• AMS SENSORS BELGIUM BVBA · BE

Inventors

• Guy Meynants · Retie, BE
• Gerhard Eilmsteiner · Eindhoven, NL

Key dates

• Filing date: Nov 13, 2019
• Grant date: Jun 11, 2024
• Expiry date: Feb 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A pixel with enhanced quantum efficiency comprises a semiconductor body that has a first surface configured as an entrance surface and a light capturing region configured for capturing light that is incident on the first surface. The pixel further comprises a structured interface, isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface, and a filter element that is arranged at a distance from the first surface such that light that is incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.