Tunnel field effect transistor and ternary inverter comprising same
US12009393B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Nov 19, 2020 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Sep 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A tunnel field effect transistor includes a constant current formation layer, a source region and a drain region provided on the constant current formation layer, a channel layer provided between the source region and the drain region, a gate electrode provided on the channel layer, and a gate insulating film provided between the gate electrode and the channel layer, wherein the source region and the drain region have different conductivity types, and the constant current formation layer forms a constant current between the drain region and the constant current formation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.