High electron mobility transistors having improved performance
US12009417B2 · kind B2 · utility
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29Claims
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Key dates
| Filing date | May 20, 2021 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jan 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.