Core-shell nanofin vertical switch and high-voltage switching
US12009418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2022 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Dec 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A core-shell nanofin vertical switch performs high-voltage switching and includes: an n-type GaN nanofin core including: an n-type drift layer; an n-type channel; and an n-type source; a p-type nanofin shell surrounding the n-type GaN nanofin core at an interface surface of the n-type GaN nanofin core, and comprising GaN; an optional source contact disposed on the n-type GaN nanofin core and the p-type nanofin shell and in electrical communication with the n-type source, such that the n-type source is interposed between the source contact and the n-type channel; and a gate contact disposed on the p-type nanofin shell and in electrical communication with the p-type nanofin shell, such that the p-type nanofin shell is interposed between the gate contact and the n-type channel, and the gate contact is interposed between the source contact and a drain contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.