Photodiode and method for operating a photodiode

US12009439B2 · kind B2 · utility

Assignee

• ams-OSRAM International GmbH · DE

Inventors

• Massimo Cataldo Mazzillo · Corato, IT
• Tim Boescke · Dresden, DE

Key dates

• Filing date: Apr 24, 2020
• Grant date: Jun 11, 2024
• Expiry date: Jun 5, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/50

Abstract

In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.