Method of patterning a thin-film photovoltaic layer stack
US12009445B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Feb 17, 2021 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Feb 17, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.