Unidirectional transient voltage suppression device
US12009658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2022 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Apr 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a transient voltage suppression device comprising a single crystal semiconductor substrate doped with a first conductivity type comprising first and second opposing surfaces, a semiconductor region doped with a second conductivity type opposite to the first conductivity type extending into the substrate from the first surface, a first electrically conductive electrode on the first side contacting the semiconductor region and a second electrically conductive electrode on the second side contacting the substrate, a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.