Optically switched IGBT
US12009812B2 · kind B2 · utility
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3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2021 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Dec 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/282
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A switching device includes an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate. A stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.