Semiconductor memory device
US12010832B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jan 8, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.