Vertical type non-volatile memory device and method of manufacturing the same
US12010840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2020 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jan 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical type non-volatile memory device includes a substrate having a cell array area of a block unit and an extension area, a vertical contact disposed in the extension area, a plurality of vertical channel structures provided on the substrate in the cell array area, a plurality of dummy channel structures provided on the substrate in the extension area, and a plurality of gate electrode layers and a plurality of interlayer insulation layers stacked alternately on the substrate. In an electrode pad connected to the vertical contact, dummy channel structures are disposed at both sides of the vertical contact and a horizontal cross-sectional surface of each of the plurality of dummy channel structures has a shape which is longer in one direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.