Tailorable electrode capping for microfluidic devices
US12011715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2020 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Jan 20, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01L2300/0896
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method of forming a microfluidic device is disclosed. The method includes forming a first dielectric layer on a substrate, forming electrodes partially into the first dielectric layer, and forming a second dielectric layer on the electrodes. The method includes filling, with a metal material, two wells formed in the second dielectric layer such that the metal material is in direct contact with the electrodes. The method includes forming a third dielectric layer on the metal material and second dielectric layer. The method includes filling, with a structural material, a channel formed between the wells such that the structural material does not directly contact the electrodes. The method includes forming a fourth dielectric layer on the third dielectric layer and the structural material, extracting the structural material through at least one vent hole in the fourth dielectric layer, and forming a fifth dielectric layer on the fourth dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.