Method of processing a lithium tantalate and/or lithium niobate wafer by subjecting the wafer to heat and a reducing agent
US12012669B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jul 28, 2020 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Sep 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02559
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.