Integrated current sensor with magnetic flux concentrators
US12013419B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jul 22, 2022 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Jul 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one example, circuitry is formed in a semiconductor die. A magnetic concentrator is formed on a surface of the semiconductor die and over the circuitry. An isolation spacer is placed on a lead frame. The semiconductor die is placed on the isolation spacer, and the magnetic concentrator is aligned to overlap the lead frame. Electrical interconnects are formed between the semiconductor die and the lead frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.