Methods for forming thin film transistors on a glass substrate and liquid crystal displays formed therefrom
US12013619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2019 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Jul 29, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13685
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.