Patent · US Active

Semiconductor photoresist composition and method of forming patterns using the composition

US12013635B2 · kind B2 · utility

0Cited by
6References
11Claims
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Key dates

Filing dateNov 10, 2021
Grant dateJun 18, 2024
Priority date
Expiry dateNov 10, 2041

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC07F7/2224
  • WIPO fieldOrganic fine chemistry
  • WIPO sectorChemistry

Abstract

A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.