Semiconductor photoresist composition and method of forming patterns using the composition
US12013635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2021 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Nov 10, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/2224
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.