Memory selector threshold voltage recovery
US12014774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2022 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Aug 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes applying a first voltage pulse across a memory cell, wherein the memory cell includes a selector, wherein the first voltage pulse switches the selector into an on-state; after applying the first voltage pulse, applying a second voltage pulse across the memory cell, wherein before applying the second voltage pulse the selector has a first voltage threshold, wherein after applying the second voltage pulse the selector has a second voltage threshold that is less than the first voltage threshold; and after applying the second voltage pulse, applying a third voltage pulse across the memory cell, wherein the third voltage pulse switches the selector into an on-state; wherein the selector remains continuously in an off-state between the first voltage pulse and the third voltage pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.