Semiconductor heat treatment member and manufacturing method thereof
US12014948B2 · kind B2 · utility
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5Claims
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Assignee
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Key dates
| Filing date | Dec 15, 2021 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Dec 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68735
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor heat treatment member for holding a semiconductor wafer, including a base member a surface of which is covered with an oxide film, the base member including a silicon carbide, in which a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 μm and an element average length RSm of shorter than or equal to 40 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.