Patent · US Active

Multi-die-package and method

US12014973B2 · kind B2 · utility

0Cited by
5References
6Claims
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Assignee

Inventors

Key dates

Filing dateJul 6, 2021
Grant dateJun 18, 2024
Priority date
Expiry dateJul 6, 2041

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02B70/10
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method includes providing a processed first wafer having front and back sides and including power semiconductor dies implemented within the wafer by processing its front side, each die having a first load terminal at the front side and a second load terminal at the back side; providing an unprocessed second wafer made of an electrically insulating material and having first and second opposing sides; forming a plurality of recesses within the second wafer; filling the plurality of recesses with a conductive material; forming a stack by attaching, prior or subsequent to filling the recesses, the second wafer to the front side of the first wafer, the conductive material electrically contacting the first load terminals of the power semiconductor dies; and ensuring that the conductive material provides an electrical connection between the first side and the second side of the second wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.