Bonding structure and method thereof
US12015001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2022 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Mar 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1632
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.