Semiconductor device and fabrication method thereof
US12015067B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Apr 15, 2021 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Jul 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate; a gate structure on the base substrate, including a first portion in a first region and a second portion in a second region; and one or more stop layers on the base substrate and located in the first portion of the gate structure in the first region. A length of the first portion of the gate structure in the first region is larger than a length of the second portion of the gate structure in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.