Methods of manufacturing high electron mobility transistors having a modified interface region
US12015075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2021 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | May 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48195
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a high electron mobility transistor (HEMT) includes: providing a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate; forming a first insulating layer on the barrier layer; and forming a gate contact, a source contact, and a drain contact on the barrier layer. An interface between the first insulating layer and the barrier layer comprises a modified interface region on a drain access region and/or a source access region of the semiconductor structure such that a sheet resistance of the drain access region and/or the source access region is between 300 and 400 Ω/sq.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.