Patent · US Active

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

US12018387B2 · kind B2 · utility

0Cited by

2References

11Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Saurabh Roy · Villach, AT
Matteo Dainese · Munich, DE
Michael Ehmann · Villach, AT
Hiroshi Narahashi · Villach, AT
Johanna Schlaminger · Klagenfurt, AT
Katharina Teichmann · Munich, DE
Sigrid Wabnig · Villach, AT

Key dates

Filing date	Jan 24, 2022
Grant date	Jun 25, 2024
Priority date	—
Expiry date	Jan 24, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/83399
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.