Method and system for manufacturing a semiconductor device
US12019370B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Sep 1, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a semiconductor device includes forming a photoresist layer comprising a photoresist composition over a substrate to form a photoresist-coated substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist layer exposing a portion of the substrate, and a purge gas is applied to the patterned photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.