Memory device for reducing row hammer disturbance, and a method of refreshing the same
US12020739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2023 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Apr 25, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a memory cell array connected to a plurality of wordlines and a plurality of bitlines; a row decoder configured to select a wordline, among the plurality of wordlines, in response to a row address; a column decoder configured to corresponding bitlines, among the plurality of bitlines, in response to a column address; a sense amplification circuit having a plurality of amplifiers connected to the selected corresponding bitlines; a row hammer detector configured to generate a refresh row address when the number of accesses to a row corresponding to the row address is a multiple of a predetermined value; and a refresh controller configured to perform a refresh operation on a row corresponding to the refresh row address. The row corresponding to the refresh row address is disposed adjacent to the row corresponding to the row address.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.