Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device
US12020767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Oct 21, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.