Semiconductor structure and forming method thereof
US12020980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Jan 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.