Transistor switches with electrostatic discharge protection
US12021076B2 · kind B2 · utility
1Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Dec 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.