Reduction of surface recombination losses in micro-LEDs

US12021168B1 · kind B1 · utility

Assignee

• Meta Platforms Technologies, LLC · US

Inventors

• Thomas Lauermann · Heilbronn, DE
• Stephan Lutgen · Regensburg, DE
• David Hwang · Fort Collins, US

Key dates

• Filing date: Jan 27, 2023
• Grant date: Jun 25, 2024
• Expiry date: Jan 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8242
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method of forming an LED involves forming a semiconductor structure on a substrate. The semiconductor structure includes a p-side semiconductor layer, an n-side semiconductor layer, and an active light emitting layer between the p-side semiconductor layer and the n-side semiconductor layer. The semiconductor structure is also formed to include a light outcoupling surface facing the substrate. The light outcoupling surface has a diameter less than twice an electron diffusion length of a material of the semiconductor structure. The method further involves implanting ions in an outer region of the semiconductor structure, then annealing the outer region after the ions have been implanted. The annealing causes the ions to intermix with atoms within the outer region, thereby increasing a bandgap of the outer region.