Light-emitting diode chip having a gap between epitaxial structures and method for manufacturing the same, and display device
US12021173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2020 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Dec 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.