Bulk acoustic wave resonator with multilayer base
US12021498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Aug 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.