Radio frequency crossover with high isolation in microelectronics H-frame device
US12022608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Mar 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P5/028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronics H-frame device comprising an RF crossover includes: a stack of two or more substrates, wherein a bottom surface of a top substrate comprises top substrate bottom metallization, and wherein a top surface of a bottom substrate comprises bottom substrate top metallization, wherein the top substrate bottom metallization and the bottom substrate top metallization form a ground plane that provides isolation to allow a first signal line to traverse one or more of the top substrate and the bottom substrate without being disturbed by a second signal line traversing one or more of the top substrate and the bottom substrate at a non-zero angle relative to the first signal line, at least one of the first signal line and the second signal line passing to a second level with the protection of the ground plane, thereby providing isolation from the other signal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.