Display apparatus having an oxide semiconductor pattern
US12022704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2023 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Feb 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/873
Abstract
A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.