Method to control the etching rate of materials
US12024436B2 · kind B2 · utility
0Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Oct 16, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for etching materials in which organic solvents are added to the etching mixture and combined in a mixing arrangement. When agitated organic materials mix with the etching agent and interact with the underlying material to form a shield around the etched areas that prevents the additional interaction of water with the newly etched areas and enables the etching of silicon oxides (SiOx) but does not oxidize Si. This method leads to milder reactions with less heat generation and avoids the safety hazards associated with conventional etching methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.