Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN

US12024693B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Joannes Theodorus Valentinus Hoogboom · Ludwigshafen, DE
• Andreas Klipp · Lambsheim, DE
• Jhih Jheng Ke · Taoyuan, TW
• Yi-Ping Cheng · Taoyuan, TW

Key dates

• Filing date: Mar 25, 2019
• Grant date: Jul 2, 2024
• Expiry date: May 25, 2041

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C11D2111/22
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the c…