Preparation method of high resistance gallium oxide based on deep learning and vertical bridgman growth method
US12026616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | May 8, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG16C20/70
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present application discloses a preparation method of high resistance gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method comprises: obtaining a preparation data of the high resistance gallium oxide single crystal, the preparation data comprises a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data comprises a doping type data and a doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted property data comprises a predicted resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.