Three-dimensional beam forming X-ray source
US12027341B2 · kind B2 · utility
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72References
4Claims
0Family size
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Key dates
| Filing date | Dec 5, 2022 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Feb 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2235/166
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
X-ray target element is comprised of a planar wafer. The planar wafer element includes a target layer and a substrate layer. The target layer is comprised of an element having a relatively high atomic number and the substrate layer is comprised of diamond. The substrate layer is configured to support the target layer and facilitate transfer of thermal energy away from the target layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.