Mask structure, semiconductor structure and methods for manufacturing same
US12027369B2 · kind B2 · utility
0Cited by
3References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 14, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Aug 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application relates to a mask structure, a semiconductor structure and methods for manufacturing the same. The method for manufacturing a mask structure includes: dividing an overall structure into two regions, and developing the array region and the periphery region with a negative photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.