Image sensor and method for fabricating the same
US12027556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Sep 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor includes a substrate, a photoelectric conversion region disposed inside the substrate, a first active region disposed inside the substrate to include a ground region, a floating diffusion region, and a channel region for connecting the ground region and the floating diffusion region, a substrate trench disposed inside the channel region, a transfer gate disposed on a face of the substrate to include a lower gate which fills a part of the substrate trench and has a first width, and an upper gate having a second width smaller than the first width on the lower gate, and a gate spacer disposed inside the substrate trench to be interposed between the ground region and the upper gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.