Lateral power semiconductor device

US12027577B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Shuhao Zhang · Cupertino, US
• Zhangyi'an Yuan · Chengdu, CN
• Dican Hou · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jun 18, 2021
• Grant date: Jul 2, 2024
• Expiry date: Feb 15, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.