Thin film transistor comprising active layer having thickness difference and display apparatus comprising the same
US12027631B2 · kind B2 · utility
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16Claims
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Assignee
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Key dates
| Filing date | May 31, 2023 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | May 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.