Electrostatic protection structure and electrostatic protection circuit
US12027846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Mar 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode. The electrostatic protection structure weakens the positive feedback of the parasitic transistor in the SCR device, improves the anti-latch capability of the device, realizes stronger protection capability, and enhances the reliability of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.