Piezoelectric single crystal, fabrication method therefor, and piezoelectric and dielectric application parts using same
US12031232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Dec 8, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08K2201/001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.