Long-wave infrared anti-reflection protective film on ZnS substrate and preparation method thereof
US12032122B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 10, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Mar 21, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present application provides a long-wave infrared anti-reflection protective film on a ZnS substrate and a preparation method thereof, wherein the ZnS substrate long-wave infrared anti-reflection protective film comprises a ZnS film layer and a Y2O3 film layer sequentially arranged on the ZnS substrate. The ZnS substrate has a thickness of 2-15 mm, and the ZnS film layer has a thickness of 80-120 nm, the Y2O3 film layer has a thickness of 1000-1300 nm, and a film structure of Y2O3 layer gradually changes from an inside to a surface. The method for preparing a long-wave infrared anti-reflection protective film on a ZnS substrate comprises the following steps: 1) performing a polishing treatment and surface treatment on the ZnS substrate; 2) depositing a ZnS film layer on the ZnS substrate; 3) depositing a Y2O3 film layer on the ZnS film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.