Band-pass filter and manufacturing method therefor
US12032187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Jun 5, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/281
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are: a band-pass filter for which filter characteristics can be improved; and a manufacturing method therefor. A band-pass filter 11, which allows light of a specific wavelength region to pass, includes: a substrate 12 which has light transmitting properties; a first dielectric multilayer film 13 that is provided on a first main surface S1 of the substrate 12; and a second dielectric multilayer film 14 that is provided on a second main surface S2 which is opposite the first main surface S1. The first dielectric multilayer film 13 contains a hydrogenated silicon layer. The second dielectric multilayer film 14 contains a hydrogenated silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.