Measurement tool and method for lithography masks
US12032298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Sep 2, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95676
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure is directed to a EUV mask measurement tool having a source assembly that generates a high power extreme ultraviolet (EUV) light beam, a detector assembly including a projection optics system and a CCD camera, a stage for supporting a patterned mask, the pattern mask including a plurality of predetermined test sites, a processor programmed to determine a site specific best focus plane for each of the plurality of predetermined test sites on the patterned mask, and a program module to generate instructions to move the stage to the best focus plane for each of the plurality of predetermined test sites on the patterned mask. In addition, a method for generating a site specific best focus plane for each of the plurality of predetermined test sites using a continuous scanning process that provides a continuous image output from the test site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.