Wafer sample analysis method and device
US12033313B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jul 13, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Jul 26, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A wafer sample analysis method includes: providing a wafer sample, the wafer sample at least including a slope configured to expose a substrate, a first protective layer and a first doped layer on a same surface, the first protective layer being formed on the substrate, and the first doped layer being formed on the first protective layer; and acquiring and analyzing a slope image of the slope to obtain a doping depth and a doping concentration of elements in the wafer sample in the slope image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.