In-plane magnetized spin-orbit magnetic device
US12033682B2 · kind B2 · utility
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7References
20Claims
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Key dates
| Filing date | Dec 28, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Oct 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.